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HB00600 - SEMI HB6 - Test Method for Measurement of Thickness and Shape of Crystalline Sapphire Wafers by Using Optical Probes StdPbc-0817 No test is provided for

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Description

No test is provided for the blend radius at the apex of the notch

wall) tubing and components

The measurement requires the fabrication of a guard-ring MOS capacitor (refer to Figure 1)

This Guide provides minimum definitions for site utilities needed to support the UPW system

SEMI F48-0600 (technical revision)

HB00600 - SEMI HB6 - Test Method for Measurement of Thickness and Shape of Crystalline Sapphire Wafers by Using Optical Probes StdPbc-0817 No test is provided forThis Standard was technically approved by the HB LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 4, 2015. Available at www. semiviews. org and www. semi. org in March 2016; originally published June 2015. Crystalline sapphire wafers (CSW) are used as substrates for manufacturing compound semiconductor devices, in particular high brightness light emitting diodes (HB

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